| PART |
Description |
Maker |
| SD103AWS |
Low Forward Voltage Drop Guard Ring Construction for Transient protection
|
SHIKE Electronics
|
| BAT54AW BAT54SW BAT54CW |
Low forward voltage Guard ring protected Very small SMD package.
|
TY Semiconductor Co., Ltd
|
| 1N5177W |
Low Forward Voltage Drop Guard Ring Constuction for Transient Protection
|
TY Semiconductor Co., Ltd
|
| BAT64-07W BAT6407W Q62702-A3470 BAT6407WQ62702A347 |
Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) 0.12 A, 2 ELEMENT, SILICON, SIGNAL DIODE
Ten Output Zero Delay Buffer
INVERTER 5V-INPUT 900V-OUTPUT
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CLY32-00 CLY32-05 CLY32-10 CLY32 |
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes 伊雷尔C波段砷化镓功率场效应
HiRel C-Band GaAs Power-MESFET
|
INFINEON[Infineon Technologies AG]
|
| SD0530WT |
Guard ring construction for transient Protection
|
Bruckewell Technology L...
|
| MBR1545CG |
Guard ring die constuction for transient protection
|
Kersemi Electronic Co., Ltd.
|
| VS-63CPQ100PBF |
Guard ring for enhanced ruggedness and long term reliability
|
Vishay Siliconix
|
| 200CMQ035 200CMQ045 200CMQ-SERIES 200CMQ040 |
SCHOTTKY RECTIFIER
Guard ring for enhanced ruggedness and long term reliability
Center tap module
|
Sangdest Microelectroni...
|
| 309CMQ135 |
SCHOTTKY RECTIFIER
Guard ring for enhanced ruggedness and long term reliability
|
Sangdest Microelectronic (N...
Sangdest Microelectroni...
|
| BAV99T BAV70T |
PN Junction Guard Ring for Transient and ESD Protection
|
Sangdest Microelectroni...
|
